Type Designator: STS3426
Type of Transistor: MOSFET
Find great deals for 1-10pcs AON6426 AO6426 6426 MOSFET QFN-8. Shop with confidence on eBay!
Find great deals for 1-10pcs AON6426 AO6426 6426 MOSFET QFN-8. Shop with confidence on eBay! The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and battery protection applications. V Gate-Source Voltage ±20 V Drain-Source Voltage 30 Units Maximum Junction-to-Ambient A t ≤ 10s °C/W Parameter RθJA. 5pcs AON6426 AO6426 6426 MOSFET QFN-8 New Original: Amazon.com: Industrial & Scientific. Molex Modular Connectors / Ethernet Connectors Modular Jack Hsg Ass r Jack Hsg Assy 4Ckt datasheet, inventory & pricing.
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 30 V Turn up the speakers mp3 download.
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 4.2 A
Total Gate Charge (Qg): 58 nC
Drain-Source Capacitance (Cd): 73 pF
Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm
Package: SOT23
STS3426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STS3426 Datasheet (PDF)
0.1. sts3426.pdf Size:121K _samhop
GreenProductSTS3426aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.31 @ VGS= 10VSuface Mount Package.30V 4.2A 40 @ VGS= 4.5V52 @ VGS= 2.5V SOT 26 DTop ViewD 1 6 DGD 2 5 DG 3 4 SSABSOLUTE MAXIMUM RA
8.1. sts3420.pdf Size:107K _samhop
GreenProductSTS3420aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS= 10VSuface Mount Package.30V 4.5A 40 @ VGS= 4.5V 53 @ VGS= 2.5V DSOT23DGSGS) ABSOLUTE MAXIMUM RATINGS (TA=25C unless o
8.2. sts3429.pdf Size:103K _samhop
GreenProductSTS3429aS mHop Microelectronics C orp.Ver 2.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.85 @ VGS=-10VSuface Mount Package.-30V -3.2A105 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS
Datasheet: FDG6332C, STS3623, FDG6332C_F085, STS3621, FDG6335N, FDG8842CZ, STS3620, STS3429, 2SK2837, FDG8850NZ, FDH038AN08A1, FDH047AN08A0, FDH055N15A, FDH3632, STS3411A, FDH44N50, FDH45N50F_F133.
LIST
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MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
Type Designator: STS3426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 4.2 A
Total Gate Charge (Qg): 58 nC
Drain-Source Capacitance (Cd): 73 pF
Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm
Package: SOT23
6426 Mosfet Drive
STS3426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STS3426 Datasheet (PDF)
0.1. sts3426.pdf Size:121K _samhop
GreenProductSTS3426aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.31 @ VGS= 10VSuface Mount Package.30V 4.2A 40 @ VGS= 4.5V52 @ VGS= 2.5V SOT 26 DTop ViewD 1 6 DGD 2 5 DG 3 4 SSABSOLUTE MAXIMUM RA
8.1. sts3420.pdf Size:107K _samhop
GreenProductSTS3420aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS= 10VSuface Mount Package.30V 4.5A 40 @ VGS= 4.5V 53 @ VGS= 2.5V DSOT23DGSGS) ABSOLUTE MAXIMUM RATINGS (TA=25C unless o
8.2. sts3429.pdf Size:103K _samhop
GreenProductSTS3429aS mHop Microelectronics C orp.Ver 2.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.85 @ VGS=-10VSuface Mount Package.-30V -3.2A105 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS
Datasheet: FDG6332C, STS3623, FDG6332C_F085, STS3621, FDG6335N, FDG8842CZ, STS3620, STS3429, 2SK2837, FDG8850NZ, FDH038AN08A1, FDH047AN08A0, FDH055N15A, FDH3632, STS3411A, FDH44N50, FDH45N50F_F133.
6426 Mosfet Power
6426 Mosfet Price
LIST
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6426 Mosfet Pdf
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02